Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
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UJ3D06520KSD650V 20A SIC SCHOTTKY DIODE G3, |
422 | - |
RFQ |
![]() Datasheet |
Tube | Gen-III | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 654pF @ 1V, 1MHz | 0 ns | 120 µA @ 650 V | 650 V | 10A (DC) | -55°C ~ 175°C | 1.7 V @ 10 A |
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UJ3D1220K21200V 20A SIC SCHOTTKY DIODE G3, |
536 | - |
RFQ |
![]() Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 810pF @ 1V, 1MHz | 0 ns | 190 µA @ 1200 V | 1200 V | 20A (DC) | -55°C ~ 175°C | 1.7 V @ 20 A | |
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UJ3D1220KSD1200V 20A SIC SCHOTTKY DIODE G3, |
445 | - |
RFQ |
![]() Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1020pF @ 1V, 1MHz | 0 ns | 220 µA @ 1200 V | 1200 V | 10A (DC) | -55°C ~ 175°C | 1.6 V @ 10 A | |
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UJ3D06530TS650V 30A SIC SCHOTTKY DIODE G3, |
829 | - |
RFQ |
![]() Datasheet |
Tube | Gen-III | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 990pF @ 1V, 1MHz | 0 ns | 370 µA @ 650 V | 650 V | 30A (DC) | -55°C ~ 175°C | 1.7 V @ 30 A |
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UJ3D1250K1200V 50A SIC SCHOTTKY DIODE G3, |
575 | - |
RFQ |
![]() Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 2340pF @ 1V, 1MHz | 0 ns | 400 µA @ 1200 V | 1200 V | 50A (DC) | -55°C ~ 175°C | 1.7 V @ 50 A |