Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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WNSC2D201200WQSILICON CARBIDE SCHOTTKY DIODE |
3,000 | - |
RFQ |
![]() Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 845pF @ 1V, 1MHz | 0 ns | 200 µA @ 1200 V | 1200 V | 20A | 175°C | 1.8 V @ 20 A | |
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BYC15-600,127DIODE GEN PURP 500V 15A TO220AC |
303 | - |
RFQ |
![]() Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 55 ns | 200 µA @ 600 V | 500 V | 15A | 150°C (Max) | 2.9 V @ 15 A | |
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WND45P16WQSTANDARD POWER DIODE |
2,490 | - |
RFQ |
![]() Datasheet |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 1600 V | 1600 V | 45A | 150°C | 1.4 V @ 45 A | |
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WNSC2D10650DJSILICON CARBIDE SCHOTTKY DIODE |
3,349 | - |
RFQ |
![]() Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 310pF @ 1V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 10A | 175°C | 1.7 V @ 10 A | |
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BYC30X-600PSQWEEN'S 5TH GENERATION HYPER FAST |
2,830 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 45 ns | 10 µA @ 600 V | 600 V | 30A | 175°C | 2.75 V @ 30 A |