Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
WNSC2D201200WQ

WNSC2D201200WQ

SILICON CARBIDE SCHOTTKY DIODE

WeEn Semiconductors

3,000 -

RFQ

WNSC2D201200WQ

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 845pF @ 1V, 1MHz 0 ns 200 µA @ 1200 V 1200 V 20A 175°C 1.8 V @ 20 A
BYC15-600,127

BYC15-600,127

DIODE GEN PURP 500V 15A TO220AC

WeEn Semiconductors

303 -

RFQ

BYC15-600,127

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 55 ns 200 µA @ 600 V 500 V 15A 150°C (Max) 2.9 V @ 15 A
WND45P16WQ

WND45P16WQ

STANDARD POWER DIODE

WeEn Semiconductors

2,490 -

RFQ

WND45P16WQ

Datasheet

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 10 µA @ 1600 V 1600 V 45A 150°C 1.4 V @ 45 A
WNSC2D10650DJ

WNSC2D10650DJ

SILICON CARBIDE SCHOTTKY DIODE

WeEn Semiconductors

3,349 -

RFQ

WNSC2D10650DJ

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount 310pF @ 1V, 1MHz 0 ns 50 µA @ 650 V 650 V 10A 175°C 1.7 V @ 10 A
BYC30X-600PSQ

BYC30X-600PSQ

WEEN'S 5TH GENERATION HYPER FAST

WeEn Semiconductors

2,830 -

RFQ

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 45 ns 10 µA @ 600 V 600 V 30A 175°C 2.75 V @ 30 A
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