Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
GP2T080A120H

GP2T080A120H

SIC MOSFET 1200V 80M TO-247-4L

SemiQ

3,717 -

RFQ

GP2T080A120H

Datasheet

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 35A (Tc) 20V 100mOhm @ 20A, 20V 4V @ 10mA 61 nC @ 20 V +25V, -10V 1377 pF @ 1000 V - 188W (Tc) -55°C ~ 175°C (TJ) Through Hole
GCMX080B120S1-E1

GCMX080B120S1-E1

SIC 1200V 80M MOSFET SOT-227

SemiQ

3,515 -

RFQ

GCMX080B120S1-E1

Datasheet

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 30A (Tc) 20V 100mOhm @ 20A, 20V 4V @ 10mA 58 nC @ 20 V +25V, -10V 1336 pF @ 1000 V - 142W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
GCMS080B120S1-E1

GCMS080B120S1-E1

SIC 1200V 80M MOSFET & 10A SBD S

SemiQ

3,029 -

RFQ

GCMS080B120S1-E1

Datasheet

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 30A (Tc) 20V 100mOhm @ 20A, 20V 4V @ 10mA 58 nC @ 20 V +25V, -10V 1374 pF @ 1000 V - 142W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
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    800+ Daily average RFQ Volume
    5,000.000
    5,000,000 Standard Product Unit
    1800+
    1800+ Worldwide Manufacturers
    150,000+
    150,000+ In-stock Warehouse
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