Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TK65A10N1,S4X

TK65A10N1,S4X

MOSFET N-CH 100V 65A TO220SIS

Toshiba Semiconductor and Storage

3,274 -

RFQ

TK65A10N1,S4X

Datasheet

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 65A (Tc) 10V 4.8mOhm @ 32.5A, 10V 4V @ 1mA 81 nC @ 10 V ±20V 5400 pF @ 50 V - 45W (Tc) 150°C (TJ) Through Hole
TK28A65W,S5X

TK28A65W,S5X

MOSFET N-CH 650V 27.6A TO220SIS

Toshiba Semiconductor and Storage

2,582 -

RFQ

TK28A65W,S5X

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 27.6A (Ta) 10V 110mOhm @ 13.8A, 10V 3.5V @ 1.6mA 75 nC @ 10 V ±30V 3000 pF @ 300 V - 45W (Tc) 150°C (TJ) Through Hole
TK31Z60X,S1F

TK31Z60X,S1F

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

2,553 -

RFQ

TK31Z60X,S1F

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 88mOhm @ 9.4A, 10V 3.5V @ 1.5mA 65 nC @ 10 V ±30V 3000 pF @ 300 V - 230W (Tc) 150°C Through Hole
TK62Z60X,S1F

TK62Z60X,S1F

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

2,802 -

RFQ

TK62Z60X,S1F

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 61.8A (Ta) 10V 40mOhm @ 21A, 10V 3.5V @ 3.1mA 135 nC @ 10 V ±30V 6500 pF @ 300 V - 400W (Tc) 150°C Through Hole
TK7R0E08QM,S1X

TK7R0E08QM,S1X

UMOS10 TO-220AB 80V 7MOHM

Toshiba Semiconductor and Storage

212 -

RFQ

TK7R0E08QM,S1X

Datasheet

Tube U-MOSX-H Active N-Channel MOSFET (Metal Oxide) 80 V 64A (Tc) 6V, 10V 7mOhm @ 32A, 10V 3.5V @ 500µA 39 nC @ 10 V ±20V 2700 pF @ 40 V - 87W (Tc) 175°C Through Hole
TK5R1A08QM,S4X

TK5R1A08QM,S4X

UMOS10 TO-220SIS 80V 5.1MOHM

Toshiba Semiconductor and Storage

2,518 -

RFQ

TK5R1A08QM,S4X

Datasheet

Tube U-MOSX-H Active N-Channel MOSFET (Metal Oxide) 80 V 70A (Tc) 6V, 10V 5.1mOhm @ 35A, 10V 3.5V @ 700µA 54 nC @ 10 V ±20V 3980 pF @ 40 V - 45W (Tc) 175°C Through Hole
TK3R3E08QM,S1X

TK3R3E08QM,S1X

UMOS10 TO-220AB 80V 3.3MOHM

Toshiba Semiconductor and Storage

3,433 -

RFQ

TK3R3E08QM,S1X

Datasheet

Tube U-MOSX-H Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 6V, 10V 3.3mOhm @ 50A, 10V 3.5V @ 1.3mA 110 nC @ 10 V ±20V 7670 pF @ 40 V - 230W (Tc) 175°C Through Hole
TK190E65Z,S1X

TK190E65Z,S1X

650V DTMOS VI TO-220 190MOHM

Toshiba Semiconductor and Storage

200 -

RFQ

TK190E65Z,S1X

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Ta) 10V 190mOhm @ 7.5A, 10V 4V @ 610µA 25 nC @ 10 V ±30V 1370 pF @ 300 V - 130W (Tc) 150°C Through Hole
TK190A65Z,S4X

TK190A65Z,S4X

MOSFET N-CH 650V 15A TO220SIS

Toshiba Semiconductor and Storage

175 -

RFQ

TK190A65Z,S4X

Datasheet

Tube DTMOSVI Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Ta) 10V 190mOhm @ 7.5A, 10V 4V @ 610µA 25 nC @ 10 V ±30V 1370 pF @ 300 V - 40W (Tc) 150°C Through Hole
TK155A65Z,S4X

TK155A65Z,S4X

MOSFET N-CH 650V 18A TO220SIS

Toshiba Semiconductor and Storage

2,633 -

RFQ

TK155A65Z,S4X

Datasheet

Tube DTMOSVI Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Ta) 10V 155mOhm @ 9A, 10V 4V @ 730µA 29 nC @ 10 V ±30V 1635 pF @ 300 V - 40W (Tc) 150°C Through Hole
SSM6K781G,LF

SSM6K781G,LF

MOSFET N-CH 12V 7A 6WCSP6C

Toshiba Semiconductor and Storage

500 -

RFQ

SSM6K781G,LF

Datasheet

Tape & Reel (TR),Cut Tape (CT) U-MOSVII-H Active N-Channel MOSFET (Metal Oxide) 12 V 7A (Ta) 1.5V, 4.5V 18mOhm @ 1.5A, 4.5V 1V @ 250µA 5.4 nC @ 4.5 V ±8V 600 pF @ 6 V - 1.6W (Ta) 150°C (TJ) Surface Mount
TW048N65C,S1F

TW048N65C,S1F

G3 650V SIC-MOSFET TO-247 48MOH

Toshiba Semiconductor and Storage

2,174 -

RFQ

TW048N65C,S1F

Datasheet

Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 40A (Tc) 18V 65mOhm @ 20A, 18V 5V @ 1.6mA 41 nC @ 18 V +25V, -10V 1362 pF @ 400 V - 132W (Tc) 175°C Through Hole
SSM3J15FS,LF

SSM3J15FS,LF

MOSFET P-CH 30V 100MA SSM

Toshiba Semiconductor and Storage

413 -

RFQ

SSM3J15FS,LF

Datasheet

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 100mA (Ta) 2.5V, 4V 12Ohm @ 10mA, 4V 1.7V @ 100µA - ±20V 9.1 pF @ 3 V - 100mW (Ta) 150°C Surface Mount
SSM3K56FS,LF

SSM3K56FS,LF

MOSFET N-CH 20V 800MA SSM

Toshiba Semiconductor and Storage

749,990 -

RFQ

SSM3K56FS,LF

Datasheet

Tape & Reel (TR),Cut Tape (CT) U-MOSVII-H Active N-Channel MOSFET (Metal Oxide) 20 V 800mA (Ta) 1.5V, 4.5V 235mOhm @ 800mA, 4.5V 1V @ 1mA 1 nC @ 4.5 V ±8V 55 pF @ 10 V - 150mW (Ta) 150°C (TJ) Surface Mount
SSM6K504NU,LF

SSM6K504NU,LF

MOSFET N-CH 30V 9A 6UDFNB

Toshiba Semiconductor and Storage

2,075 -

RFQ

SSM6K504NU,LF

Datasheet

Tape & Reel (TR),Cut Tape (CT) U-MOSVII Active N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta) 4.5V, 10V 19.5mOhm @ 4A, 10V 2.5V @ 100µA 4.8 nC @ 4.5 V ±20V 620 pF @ 15 V - 1.25W (Ta) 150°C (TJ) Surface Mount
SSM3K59CTB,L3F

SSM3K59CTB,L3F

MOSFET N-CH 40V 2A CST3B

Toshiba Semiconductor and Storage

591 -

RFQ

SSM3K59CTB,L3F

Datasheet

Tape & Reel (TR),Cut Tape (CT) U-MOSVII-H Active N-Channel MOSFET (Metal Oxide) 40 V 2A (Ta) 1.8V, 8V 215mOhm @ 1A, 8V 1.2V @ 1mA 1.1 nC @ 4.2 V ±12V 130 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
SSM3J36FS,LF

SSM3J36FS,LF

MOSFET P-CH 20V 330MA SSM

Toshiba Semiconductor and Storage

63,173 -

RFQ

SSM3J36FS,LF

Datasheet

Tape & Reel (TR),Cut Tape (CT) U-MOSIII Active P-Channel MOSFET (Metal Oxide) 20 V 330mA (Ta) 1.5V, 4.5V 1.31Ohm @ 100mA, 4.5V 1V @ 1mA 1.2 nC @ 4 V ±8V 43 pF @ 10 V - 150mW (Ta) 150°C (TJ) Surface Mount
SSM3J118TU(TE85L)

SSM3J118TU(TE85L)

MOSFET P-CH 30V 1.4A UFM

Toshiba Semiconductor and Storage

455 -

RFQ

SSM3J118TU(TE85L)

Datasheet

Tape & Reel (TR),Cut Tape (CT) U-MOSII Active P-Channel MOSFET (Metal Oxide) 30 V 1.4A (Ta) 4V, 10V 240mOhm @ 650mA, 10V - - ±20V 137 pF @ 15 V - 500mW (Ta) 150°C (TJ) Surface Mount
SSM6K518NU,LF

SSM6K518NU,LF

MOSFET N-CH 20V 6A 6UDFNB

Toshiba Semiconductor and Storage

324 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 6A (Ta) 1.5V, 4.5V 33mOhm @ 4A, 4.5V 1V @ 1mA 3.6 nC @ 4.5 V ±8V 410 pF @ 10 V - 1.25W (Ta) 150°C Surface Mount
SSM6K517NU,LF

SSM6K517NU,LF

MOSFET N-CH 30V 6A 6UDFNB

Toshiba Semiconductor and Storage

219 -

RFQ

SSM6K517NU,LF

Datasheet

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 6A (Ta) 1.8V, 4.5V 39.1mOhm @ 2A, 4.5V 1V @ 1mA 3.2 nC @ 4.5 V +12V, -8V 310 pF @ 15 V - 1.25W (Ta) 150°C Surface Mount
Total 31 Records«Prev12Next»
Request a Quote
Part Number
Quantity
Contact
Email
Company
Comments
  • 800+
    800+ Daily average RFQ Volume
    5,000.000
    5,000,000 Standard Product Unit
    1800+
    1800+ Worldwide Manufacturers
    150,000+
    150,000+ In-stock Warehouse
    HOME ICO

    HOME

    PRODUCT ICO

    PRODUCT

    PHONE ICO

    PHONE

    USER ICO

    USER

    Online ICOOnline