Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
JANTXV1N5620/TR

JANTXV1N5620/TR

STD RECTIFIER

Microchip Technology

2,549 -

RFQ

Tape & Reel (TR) Military, MIL-PRF-19500/427 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 2 µs 500 nA @ 800 V 800 V 1A -65°C ~ 200°C 1.3 V @ 3 A
BYV98-100-TR

BYV98-100-TR

DIODE AVALANCHE 100V 4A SOD64

Vishay General Semiconductor - Diodes Division

3,895 -

RFQ

BYV98-100-TR

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 35 ns 10 µA @ 100 V 100 V 4A -55°C ~ 175°C 1.1 V @ 5 A
JAN1N5187

JAN1N5187

DIODE GEN PURP 200V 3A AXIAL

Microchip Technology

3,829 -

RFQ

JAN1N5187

Datasheet

Bulk Military, MIL-PRF-19500/424 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 200 ns 2 µA @ 200 V 200 V 3A -65°C ~ 175°C 1.5 V @ 9 A
JANTX1N914UR/TR

JANTX1N914UR/TR

SIGNAL/COMPUTER DIODE

Microchip Technology

3,458 -

RFQ

Tape & Reel (TR) Military, MIL-PRF-19500/116 RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 4pF @ 0V, 1MHz 5 ns 500 nA @ 75 V 75 V 200mA -65°C ~ 175°C 1.2 V @ 50 mA
1N6643

1N6643

DIODE GEN PURPOSE

Microchip Technology

3,803 -

RFQ

1N6643

Datasheet

Bulk RoHS - - Active - - - - - - - -
SFS1006GHMNG

SFS1006GHMNG

DIODE GEN PURP 400V 10A TO263AB

Taiwan Semiconductor Corporation

2,640 -

RFQ

SFS1006GHMNG

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 50pF @ 4V, 1MHz 35 ns 1 µA @ 400 V 400 V 10A -55°C ~ 150°C 1.3 V @ 5 A
JANTX1N5554

JANTX1N5554

DIODE GEN PURP 1KV 5A AXIAL

Microchip Technology

3,793 -

RFQ

JANTX1N5554

Datasheet

Bulk Military, MIL-PRF-19500/420 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 2 µs 2 µA @ 1000 V 1000 V 5A -65°C ~ 175°C 1.3 V @ 9 A
BYW172F-TR

BYW172F-TR

DIODE AVALANCHE 300V 3A SOD64

Vishay General Semiconductor - Diodes Division

3,043 -

RFQ

BYW172F-TR

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 100 ns 1 µA @ 300 V 300 V 3A -55°C ~ 175°C 1.5 V @ 9 A
JAN1N5623/TR

JAN1N5623/TR

RECTIFIER UFR,FRR

Microchip Technology

3,836 -

RFQ

Tape & Reel (TR) Military, MIL-PRF-19500/429 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 500 ns 500 nA @ 1 V 1000 V 1A -65°C ~ 175°C 1.6 V @ 3 A
1N5615US/TR

1N5615US/TR

UFR,FRR

Microchip Technology

2,051 -

RFQ

1N5615US/TR

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 45pF @ 12V, 1MHz 150 ns 500 nA @ 200 V 200 V 1A -65°C ~ 175°C 1.6 V @ 3 A
FFSH10120A

FFSH10120A

1200V 10A SIC SBD

onsemi

2,749 -

RFQ

FFSH10120A

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 612pF @ 1V, 100kHz 0 ns 200 µA @ 1200 V 1200 V 17A (DC) -55°C ~ 175°C 1.75 V @ 10 A
SDT10A60VCT

SDT10A60VCT

SCHOTTKY RECTIFIER TO220AB

Diodes Incorporated

3,591 -

RFQ

Tube RoHS - - Active - - - - - - - -
1N5614

1N5614

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology

2,188 -

RFQ

1N5614

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 2 µs 500 nA @ 200 V 200 V 1A -65°C ~ 200°C 1.3 V @ 3 A
JANTX1N3595UR-1/TR

JANTX1N3595UR-1/TR

SIGNAL/COMPUTER DIODE

Microchip Technology

3,710 -

RFQ

Tape & Reel (TR) Military, MIL-PRF-19500/241 RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount - 3 µs 1 nA @ 125 V 125 V 150mA -65°C ~ 175°C 920 mV @ 100 mA
SF5403-TAP

SF5403-TAP

DIODE GEN PURP 300V 3A SOD64

Vishay General Semiconductor - Diodes Division

3,776 -

RFQ

SF5403-TAP

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 50 ns 5 µA @ 300 V 300 V 3A -55°C ~ 175°C 1.1 V @ 3 A
P1000B

P1000B

DIODE STD D8X7.5 100V 10A

Diotec Semiconductor

1,000 -

RFQ

P1000B

Datasheet

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 1.5 µs 10 µA @ 100 V 100 V 10A -50°C ~ 175°C 1.05 V @ 10 A
MNS1N5811US/TR

MNS1N5811US/TR

UFR,FRR

Microchip Technology

3,749 -

RFQ

Bulk RoHS - - Active - - - - - - - -
STPSC5H12D

STPSC5H12D

DIODE SCHOTTKY 1.2KV 5A TO220AC

STMicroelectronics

2,172 -

RFQ

STPSC5H12D

Datasheet

Tube ECOPACK®2 RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 450pF @ 0V, 1MHz 0 ns 30 µA @ 1200 V 1200 V 5A -40°C ~ 175°C 1.5 V @ 5 A
1N3614/TR

1N3614/TR

STD RECTIFIER

Microchip Technology

3,416 -

RFQ

1N3614/TR

Datasheet

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 1 µA @ 800 V 800 V 1A -65°C ~ 175°C 1.1 V @ 1 A
P1000D

P1000D

DIODE STD D8X7.5 200V 10A

Diotec Semiconductor

1,000 -

RFQ

P1000D

Datasheet

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 1.5 µs 10 µA @ 200 V 200 V 10A -50°C ~ 175°C 1.05 V @ 10 A
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