Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
VS-3EJH01HM3/6B

VS-3EJH01HM3/6B

DIODE GEN PURP 100V 3A DO221AC

Vishay General Semiconductor - Diodes Division

131 -

RFQ

VS-3EJH01HM3/6B

Datasheet

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 30 ns 2 µA @ 100 V 100 V 3A -65°C ~ 175°C 930 mV @ 3 A
SCS215AGC17

SCS215AGC17

DIODE SCHOTTKY 650V 15A TO220AC

Rohm Semiconductor

2,866 -

RFQ

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 550pF @ 1V, 1MHz 0 ns 300 µA @ 600 V 650 V 15A (DC) 175°C 1.55 V @ 15 A
ES2DHE3_A/I

ES2DHE3_A/I

DIODE GEN PURP 200V 2A DO214AA

Vishay General Semiconductor - Diodes Division

120 -

RFQ

ES2DHE3_A/I

Datasheet

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 18pF @ 4V, 1MHz 20 ns 10 µA @ 200 V 200 V 2A -55°C ~ 150°C 900 mV @ 2 A
VS-HFA06PB120-N3

VS-HFA06PB120-N3

DIODE GEN PURP 1.2KV 6A TO247AC

Vishay General Semiconductor - Diodes Division

3,854 -

RFQ

VS-HFA06PB120-N3

Datasheet

Tube HEXFRED® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 80 ns 5 µA @ 1200 V 1200 V 6A -55°C ~ 150°C 3 V @ 6 A
BYM13-20-E3/96

BYM13-20-E3/96

DIODE SCHOTTKY 20V 1A DO213AB

Vishay General Semiconductor - Diodes Division

118 -

RFQ

BYM13-20-E3/96

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 110pF @ 4V, 1MHz - 500 µA @ 20 V 20 V 1A -55°C ~ 125°C 500 mV @ 1 A
MSC030SDA070B

MSC030SDA070B

DIODE SCHOTTKY 700V TO-247

Microchip Technology

2,019 -

RFQ

MSC030SDA070B

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 1200pF @ 1V, 1MHz 0 ns 200 µA @ 700 V 700 V 60A (DC) -55°C ~ 175°C 1.8 V @ 30 A
1N5553

1N5553

DIODE GEN PURP 800V 3A AXIAL

Microchip Technology

2,599 -

RFQ

1N5553

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 2 µs 1 µA @ 800 V 800 V 3A -65°C ~ 175°C 1.2 V @ 9 A
C3D10065I

C3D10065I

DIODE SCHOTTKY 650V 10A TO220-2

Wolfspeed, Inc.

2,673 -

RFQ

C3D10065I

Datasheet

Tube Z-Rec® RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 480pF @ 0V, 1MHz 0 ns 50 µA @ 650 V 650 V 19A (DC) -55°C ~ 175°C -
1N2159

1N2159

DO5 40 AMP SILICON RECTFIER

Solid State Inc.

3,700 -

RFQ

Box RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - 10 µA @ 500 V 500 V 40A -65°C ~ 200°C 1.19 V @ 90 A
VS-HFA15TB60SR-M3

VS-HFA15TB60SR-M3

DIODE GEN PURP 600V 15A D2PAK

Vishay General Semiconductor - Diodes Division

3,559 -

RFQ

VS-HFA15TB60SR-M3

Datasheet

Tape & Reel (TR) HEXFRED® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 60 ns 10 µA @ 600 V 600 V 15A (DC) -55°C ~ 150°C 2 V @ 30 A
1N7052UR-1

1N7052UR-1

SCHOTTKY RECTIFIER

Microchip Technology

2,579 -

RFQ

Bulk RoHS - - Active - - - - - - - -
S16GR

S16GR

DIODE GEN PURP 400V 16A DO220AA

GeneSiC Semiconductor

2,219 -

RFQ

S16GR

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 400 V 16A -65°C ~ 175°C 1.1 V @ 16 A
VS-15ETH06HN3

VS-15ETH06HN3

DIODE GEN PURP 600V 15A TO220AC

Vishay General Semiconductor - Diodes Division

3,358 -

RFQ

VS-15ETH06HN3

Datasheet

Tape & Reel (TR) FRED Pt® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 50 µA @ 600 V 600 V 15A -65°C ~ 175°C 2.2 V @ 15 A
FR30M05

FR30M05

DIODE GEN PURP 1KV 30A DO5

GeneSiC Semiconductor

2,134 -

RFQ

FR30M05

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 500 ns 25 µA @ 800 V 1000 V 30A -40°C ~ 125°C 1 V @ 30 A
JAN1N5616US

JAN1N5616US

DIODE GEN PURP 400V 1A D5A

Microchip Technology

2,595 -

RFQ

JAN1N5616US

Datasheet

Bulk Military, MIL-PRF-19500/427 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - 2 µs 500 nA @ 400 V 400 V 1A -65°C ~ 200°C 1.3 V @ 3 A
VS-30ETH06-1-M3

VS-30ETH06-1-M3

DIODE ULTRA FAST 600V 30A TO262

Vishay General Semiconductor - Diodes Division

2,573 -

RFQ

VS-30ETH06-1-M3

Datasheet

Tube FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 35 ns 50 µA @ 600 V 600 V 30A -65°C ~ 175°C 2.6 V @ 30 A
1N7053UR-1

1N7053UR-1

SCHOTTKY RECTIFIER

Microchip Technology

3,079 -

RFQ

Bulk RoHS - - Active - - - - - - - -
S16J

S16J

DIODE GEN PURP 600V 16A DO203AA

GeneSiC Semiconductor

3,677 -

RFQ

S16J

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 600 V 16A -65°C ~ 175°C 1.1 V @ 16 A
VS-ETL1506STRL-M3

VS-ETL1506STRL-M3

DIODE GEN PURP 600V 15A TO263AB

Vishay General Semiconductor - Diodes Division

3,149 -

RFQ

VS-ETL1506STRL-M3

Datasheet

Tape & Reel (TR) FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 210 ns 15 µA @ 600 V 600 V 15A -65°C ~ 175°C 1.07 V @ 15 A
IDW32G65C5BXKSA2

IDW32G65C5BXKSA2

DIODE SCHOTTKY 650V 16A TO247-3

Infineon Technologies

2,715 -

RFQ

IDW32G65C5BXKSA2

Datasheet

Tube CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 470pF @ 1V, 1MHz 0 ns 200 µA @ 650 V 650 V 16A (DC) -55°C ~ 175°C 1.7 V @ 16 A
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