Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
WNSC2D201200WQSILICON CARBIDE SCHOTTKY DIODE |
3,000 | - |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 845pF @ 1V, 1MHz | 0 ns | 200 µA @ 1200 V | 1200 V | 20A | 175°C | 1.8 V @ 20 A | ||
NTE6115R-1200PRV 1200A |
2,177 | - |
RFQ |
Datasheet |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 30 mA @ 1200 V | 1200 V | 1625A | -30°C ~ 175°C | 1.93 V @ 3770 A | ||
NTE5870R-50PRV 12A CATH CASE |
1,547 | - |
RFQ |
Datasheet |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 12 mA @ 50 V | 50 V | 12A | -65°C ~ 175°C | 1.26 V @ 38 A | ||
NTE6111R-600PRV 1100A |
3,454 | - |
RFQ |
Datasheet |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 15 mA @ 600 V | 600 V | 1400A | -40°C ~ 180°C | 1.31 V @ 1500 A | ||
NTE5871R-50PRV 12A ANODE CASE |
130 | - |
RFQ |
Datasheet |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 12 mA @ 50 V | 50 V | 12A | -65°C ~ 175°C | 1.26 V @ 38 A | ||
NTE6102R-600PRV 550A CATH CASE |
2,350 | - |
RFQ |
Datasheet |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | 9 µs | 50 mA @ 600 V | 600 V | 300A | -65°C ~ 200°C | 2.15 V @ 1500 A | ||
UJ3D1220K21200V 20A SIC SCHOTTKY DIODE G3, |
536 | - |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 810pF @ 1V, 1MHz | 0 ns | 190 µA @ 1200 V | 1200 V | 20A (DC) | -55°C ~ 175°C | 1.7 V @ 20 A | ||
M0659LC450FAST DIODE |
3,570 | - |
RFQ |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | 4.2 µs | 100 mA @ 4500 V | 4500 V | 659A | -40°C ~ 125°C | 3 V @ 1400 A | |||
PCDP20120G1_T0_00001TO-220AC, SIC |
2,000 | - |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1.04nF @ 1V, 1MHz | 0 ns | 180 µA @ 1200 V | 1200 V | 20A (DC) | -55°C ~ 175°C | 1.7 V @ 20 A | ||
DZ600N12KHPSA1DIODE GEN PURP 1.2KV 735A MODULE |
3,317 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 40 mA @ 1200 V | 1200 V | 735A | -40°C ~ 150°C | 1.4 V @ 2200 A | ||
SIC10120PTA-BP1200V,10A,SIC SBD,TO-247AD PACKA |
1,800 | - |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 750pF @ 0V, 1MHz | - | 2 µA @ 1200 V | 1200 V | 10A | -55°C ~ 175°C | 1.8 V @ 10 A | ||
46DN06B02ELEMXPSA1POWER DIODE BG-D_ELEM-1 |
3,142 | - |
RFQ |
Datasheet |
Tray | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 40 mA @ 600 V | 600 V | 10450A | 180°C (Max) | 980 mV @ 6000 A | ||
NTE5894R-100PRV 16A CATH CASE |
119 | - |
RFQ |
Datasheet |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 12 mA @ 100 V | 100 V | 16A | -65°C ~ 175°C | 1.23 V @ 50 A | ||
DZ600N14KHPSA1DIODE GEN PURP 1.4KV 735A MODULE |
3,197 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 40 mA @ 1400 V | 1400 V | 735A | -40°C ~ 150°C | 1.4 V @ 2200 A | ||
S3D30065D1DIODE SCHOTTKY SILICON CARBIDE S |
275 | - |
RFQ |
Tube | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |||
NTE6121R-1600V 1200A |
3,016 | - |
RFQ |
Datasheet |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 30 mA @ 1600 V | 1600 V | 1625A | -30°C ~ 175°C | 1.93 V @ 3770 A | ||
S3D30065HDIODE SCHOTTKY SILICON CARBIDE S |
300 | - |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1705pF @ 1V, 100kHz | 0 ns | 200 µA @ 650 V | 650 V | 30A | -55°C ~ 175°C | 1.75 V @ 30 A | ||
DZ600N16KHPSA1DIODE GEN PURP 1.6KV 735A MODULE |
2,497 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 40 mA @ 1600 V | 1600 V | 735A | -40°C ~ 150°C | 1.4 V @ 2200 A | ||
NTE5889R-1200V 25A DO4 AK |
108 | - |
RFQ |
Datasheet |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 1 mA @ 1200 V | 1200 V | 30A | -40°C ~ 175°C | 1.2 V @ 30 A | ||
NTE6114R-1600PRV 1100A |
2,737 | - |
RFQ |
Datasheet |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 15 mA @ 1600 V | 1600 V | 1400A | -40°C ~ 180°C | 1.31 V @ 1500 A |