Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus FETType FETFeature DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs InputCapacitance(Ciss)(Max)@Vds Power-Max OperatingTemperature MountingType
MHT1000HR5178

MHT1000HR5178

N CHANNEL ENHANCEMENT-MODE RF PO

NXP USA Inc.

2,765 -

RFQ

MHT1000HR5178

Datasheet

Bulk * Active - - - - - - - - - - -
MSCSM70DUM025AG

MSCSM70DUM025AG

PM-MOSFET-SIC-SP6C

Microchip Technology

2,002 -

RFQ

Bulk - Active 2 N-Channel (Dual) Common Source Silicon Carbide (SiC) 700V 689A (Tc) 3.2mOhm @ 240A, 20V 2.4V @ 24mA 1290nC @ 20V 27000pF @ 700V 1882W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM120DUM042AG

MSCSM120DUM042AG

PM-MOSFET-SIC-SP6C

Microchip Technology

2,846 -

RFQ

Bulk - Active 2 N-Channel (Dual) Common Source Silicon Carbide (SiC) 1200V (1.2kV) 495A (Tc) 5.2mOhm @ 240A, 20V 2.8V @ 6mA 1392nC @ 20V 18100pF @ 1000V 2031W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM170TLM15CAG

MSCSM170TLM15CAG

PM-MOSFET-SIC-SBD-SP6C

Microchip Technology

2,608 -

RFQ

Bulk - Active 4 N-Channel (Three Level Inverter) Silicon Carbide (SiC) 1700V (1.7kV) 179A (Tc) 15mOhm @ 90A, 20V 3.2V @ 7.5mA 534nC @ 20V 9900pF @ 1000V 843W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM70TLM07CAG

MSCSM70TLM07CAG

PM-MOSFET-SIC-SBD-SP6C

Microchip Technology

2,614 -

RFQ

Bulk - Active 4 N-Channel (Three Level Inverter) Silicon Carbide (SiC) 700V 349A (Tc) 6.4mOhm @ 120A, 20V 2.4V @ 12mA 645nC @ 20V 13500pF @ 700V 966W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM170DUM039AG

MSCSM170DUM039AG

PM-MOSFET-SIC-SP6C

Microchip Technology

3,059 -

RFQ

Bulk - Active 2 N-Channel (Dual) Common Source Silicon Carbide (SiC) 1700V (1.7kV) 523A (Tc) 5mOhm @ 270A, 20V 3.3V @ 22.5mA 1602nC @ 20V 29700pF @ 1000V 2400W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM120TLM11CAG

MSCSM120TLM11CAG

PM-MOSFET-SIC-SBD-SP6C

Microchip Technology

2,499 -

RFQ

Bulk - Active 4 N-Channel (Three Level Inverter) Silicon Carbide (SiC) 1200V (1.2kV) 251A (Tc) 10.4mOhm @ 120A, 20V 2.8V @ 3mA 696nC @ 20V 9000pF @ 1000V 1042W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM70DUM017AG

MSCSM70DUM017AG

PM-MOSFET-SIC-SP6C

Microchip Technology

3,033 -

RFQ

Bulk - Active 2 N-Channel (Dual) Common Source Silicon Carbide (SiC) 700V 1021A (Tc) 2.1mOhm @ 360A, 20V 2.4V @ 36mA 1935nC @ 20V 40500pF @ 700V 2750W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM170TLM11CAG

MSCSM170TLM11CAG

PM-MOSFET-SIC-SBD-SP6C

Microchip Technology

2,673 -

RFQ

Bulk - Active 4 N-Channel (Three Level Inverter) Silicon Carbide (SiC) 1700V (1.7kV) 238A (Tc) 11.3mOhm @ 120A, 20V 3.2V @ 10mA 712nC @ 20V 13200pF @ 1000V 1114W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM120DUM027AG

MSCSM120DUM027AG

PM-MOSFET-SIC-SP6C

Microchip Technology

3,866 -

RFQ

Bulk - Active 2 N-Channel (Dual) Common Source Silicon Carbide (SiC) 1200V (1.2kV) 733A (Tc) 3.5mOhm @ 360A, 20V 2.8V @ 9mA 2088nC @ 20V 27000pF @ 1000V 2968W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM70TLM05CAG

MSCSM70TLM05CAG

PM-MOSFET-SIC-SBD-SP6C

Microchip Technology

3,313 -

RFQ

Bulk - Active 4 N-Channel (Three Level Inverter) Silicon Carbide (SiC) 700V 464A (Tc) 4.8mOhm @ 160A, 20V 2.4V @ 16mA 860nC @ 20V 18000pF @ 700V 1277W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM120TLM08CAG

MSCSM120TLM08CAG

PM-MOSFET-SIC-SBD-SP6C

Microchip Technology

2,966 -

RFQ

Bulk - Active 4 N-Channel (Three Level Inverter) Silicon Carbide (SiC) 1200V (1.2kV) 333A (Tc) 7.8mOhm @ 80A, 20V 2.8V @ 4mA 928nC @ 20V 12000pF @ 1000V 1378W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM170TAM15CTPAG

MSCSM170TAM15CTPAG

PM-MOSFET-SIC-SBD-SP6P

Microchip Technology

3,310 -

RFQ

MSCSM170TAM15CTPAG

Datasheet

Bulk - Active 6 N-Channel (Phase Leg) Silicon Carbide (SiC) 1700V (1.7kV) 179A (Tc) 15mOhm @ 90A, 20V 3.2V @ 7.5mA 534nC @ 20V 9900pF @ 1000V 843W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM170AM039CT6AG

MSCSM170AM039CT6AG

PM-MOSFET-SIC-SBD-SP3F

Microchip Technology

2,312 -

RFQ

MSCSM170AM039CT6AG

Datasheet

Bulk - Active 2 N Channel (Phase Leg) Silicon Carbide (SiC) 1700V (1.7kV) 523A (Tc) 5mOhm @ 270A, 20V 3.3V @ 22.5mA 1602nC @ 20V 29700pF @ 1000V 2.4kW (Tc) -40°C ~ 175°C (TJ) Chassis Mount
NX138BKSX

NX138BKSX

MOSFET 2 N-CH 60V 210MA 6TSSOP

Nexperia USA Inc.

3,761 -

RFQ

NX138BKSX

Datasheet

Tape & Reel (TR),Cut Tape (CT) - Active 2 N-Channel (Dual) Standard 60V 210mA (Ta) 3.5Ohm @ 200mA, 10V 1.5V @ 250µA 0.7nC @ 10V 20pF @ 30V 320mW -55°C ~ 150°C (TJ) Surface Mount
SSM6N36TU,LF

SSM6N36TU,LF

SMALL SIGNAL MOSFET N-CH X 2 VDS

Toshiba Semiconductor and Storage

429 -

RFQ

SSM6N36TU,LF

Datasheet

Tape & Reel (TR),Cut Tape (CT) - Active 2 N-Channel (Dual) Logic Level Gate, 1.5V Drive 20V 500mA (Ta) 630mOhm @ 200mA, 5V 1V @ 1mA 1.23nC @ 4V 46pF @ 10V 500mW (Ta) 150°C Surface Mount
EM6K7T2CR

EM6K7T2CR

1.2V DRIVE NCH+NCH MOSFET. COMPL

Rohm Semiconductor

2,908 -

RFQ

EM6K7T2CR

Datasheet

Tape & Reel (TR),Cut Tape (CT) - Active 2 N-Channel (Dual) Standard 20V 200mA (Ta) 1.2Ohm @ 200mA, 2.5V 1V @ 1mA - 25pF @ 10V 150mW 150°C (TJ) Surface Mount
CMLDM7003T TR

CMLDM7003T TR

MOSFET 2N-CH 50V 0.28A SOT563

Central Semiconductor Corp

847 -

RFQ

CMLDM7003T TR

Datasheet

Tape & Reel (TR),Cut Tape (CT) - Obsolete 2 N-Channel (Dual) Standard 50V 280mA 1.5Ohm @ 50mA, 5V 1.2V @ 250µA 0.76nC @ 4.5V 50pF @ 25V 350mW -65°C ~ 150°C (TJ) Surface Mount
NTJD1155LT1G

NTJD1155LT1G

MOSFET N/P-CH 8V 1.3A SOT363

onsemi

3,257 -

RFQ

NTJD1155LT1G

Datasheet

Tape & Reel (TR),Cut Tape (CT),Bulk - Active N and P-Channel Standard 8V 1.3A 175mOhm @ 1.2A, 4.5V 1V @ 250µA - - 400mW -55°C ~ 150°C (TJ) Surface Mount
DMG1029SV-7

DMG1029SV-7

MOSFET N/P-CH 60V SOT563

Diodes Incorporated

3,561 -

RFQ

DMG1029SV-7

Datasheet

Tape & Reel (TR),Cut Tape (CT) - Active N and P-Channel Logic Level Gate 60V 500mA, 360mA 1.7Ohm @ 500mA, 10V 2.5V @ 250µA 0.3nC @ 4.5V 30pF @ 25V 450mW -55°C ~ 150°C (TJ) Surface Mount
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