Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NVD4806NT4G-VF01NVD4806 - SINGLE N-CHANNEL POWER |
2,500 | - |
RFQ |
Datasheet |
Bulk | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 11.3A (Ta), 79A (Tc) | 4.5V, 11.5V | 6mOhm @ 30A, 11.5V | 2.5V @ 250µA | 37 nC @ 11.5 V | ±20V | 2142 pF @ 12 V | - | 1.4W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
SPB42N03S2L-13MOSFET N-CH 30V 42A TO263-3 |
173 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 42A (Tc) | 4.5V, 10V | 12.6mOhm @ 21A, 10V | 2V @ 37µA | 30.5 nC @ 10 V | ±20V | 1130 pF @ 25 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
PJW7N06A_R2_0000160V N-CHANNEL ENHANCEMENT MODE M |
2,734 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 6.6A (Tc) | 4.5V, 10V | 34mOhm @ 6A, 10V | 2.5V @ 250µA | 20 nC @ 10 V | ±20V | 1173 pF @ 25 V | - | 3.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | ||
IPN50R3K0CEATMA1MOSFET N-CH 500V 2.6A SOT223 |
659 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | CoolMOS™ CE | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 2.6A (Tc) | 13V | 3Ohm @ 400mA, 13V | 3.5V @ 30µA | 4.3 nC @ 10 V | ±20V | 84 pF @ 100 V | - | 5W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | |
IRLTS2242TRPBFMOSFET P-CH 20V 6.9A 6TSOP |
239 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 6.9A (Ta) | 2.5V, 4.5V | 32mOhm @ 6.9A, 4.5V | 1.1V @ 10µA | 12 nC @ 4.5 V | ±12V | 905 pF @ 10 V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
2SK3447TZ-E2SK3447TZ-E - SILICON N CHANNEL |
10,000 | - |
RFQ |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 1A (Ta) | 4V, 10V | 1.95Ohm @ 500mA, 10V | 2.5V @ 1mA | 4.5 nC @ 10 V | ±20V | 85 pF @ 10 V | - | 900mW (Ta) | 150°C | Through Hole | ||
G30N02TN20V,RD(MAX)<13M@4.5V,VTH0.5V~1. |
2,159 | - |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 30A (Ta) | 4.5V | 13mOhm @ 20A, 4.5V | 1.2V @ 250µA | 15 nC @ 10 V | ±12V | 900 pF @ 10 V | - | 40W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | |
PHB29N08T,118NEXPERIA PHB29N08T - 27A, 75V, 0 |
3,400 | - |
RFQ |
Datasheet |
Bulk | TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 27A (Tc) | 11V | 50mOhm @ 14A, 11V | 5V @ 2mA | 19 nC @ 10 V | ±30V | 810 pF @ 25 V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
FQD17N08LTMMOSFET N-CH 80V 12.9A TO252 |
2,483 | - |
RFQ |
Datasheet |
Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 12.9A (Tc) | 5V, 10V | 100mOhm @ 6.45A, 10V | 2V @ 250µA | 11.5 nC @ 5 V | ±20V | 520 pF @ 25 V | - | 2.5W (Ta), 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
PHB18NQ10T,118MOSFET N-CH 100V 18A D2PAK |
1,966 | - |
RFQ |
Datasheet |
Bulk | TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 18A (Tc) | 10V | 90mOhm @ 9A, 10V | 4V @ 1mA | 21 nC @ 10 V | ±20V | 633 pF @ 25 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
PHB66NQ03LTNOW NEXPERIA 66A, 25V, 0.0136OHM |
800 | - |
RFQ |
Datasheet |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
IRFHS8242TRPBFMOSFET N-CH 25V 9.9A/21A 6PQFN |
453 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 9.9A (Ta), 21A (Tc) | 4.5V, 10V | 13mOhm @ 8.5A, 10V | 2.35V @ 25µA | 10.4 nC @ 10 V | ±20V | 653 pF @ 10 V | - | 2.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
IRLMS6702TRPBFMOSFET P-CH 20V 2.4A MICRO6 |
276 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Last Time Buy | P-Channel | MOSFET (Metal Oxide) | 20 V | 2.4A (Ta) | 2.7V, 4.5V | 200mOhm @ 1.6A, 4.5V | 700mV @ 250µA (Min) | 8.8 nC @ 4.5 V | ±12V | 210 pF @ 15 V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
FDU6N50TUMOSFET N-CH 500V 6A I-PAK |
9,586 | - |
RFQ |
Datasheet |
Bulk | UniFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 6A (Tc) | 10V | 900mOhm @ 3A, 10V | 5V @ 250µA | 16.6 nC @ 10 V | ±30V | 940 pF @ 25 V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
BUK6610-75C,118NEXPERIA BUK6610 - N-CHANNEL TRE |
7,474 | - |
RFQ |
Datasheet |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 78A (Tc) | 10V | 10mOhm @ 25A, 10V | 2.8V @ 1mA | 81 nC @ 10 V | ±16V | 5251 pF @ 25 V | - | 158W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
BUK6610-75C,118NEXPERIA BUK6610 - N-CHANNEL TRE |
7,200 | - |
RFQ |
Datasheet |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 78A (Tc) | 10V | 10mOhm @ 25A, 10V | 2.8V @ 1mA | 81 nC @ 10 V | ±16V | 5251 pF @ 25 V | - | 158W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
CPH6424-TL-ECPH6424 - N-CHANNEL SILICON MOSF |
3,000 | - |
RFQ |
Datasheet |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
ECH8607-TL-EN-CHANNEL SILICON MOSFET |
2,801 | - |
RFQ |
Datasheet |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
2SK2628LS2SK2628 - N-CHANNEL SILICON MOSF |
3,166 | - |
RFQ |
Datasheet |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
FQU3N50CTUPOWER FIELD-EFFECT TRANSISTOR, 2 |
1,320 | - |
RFQ |
Datasheet |
Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 2.5A (Tc) | 10V | 2.5Ohm @ 1.25A, 10V | 4V @ 250µA | 13 nC @ 10 V | ±30V | 365 pF @ 25 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |