Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
2SK3377-Z-AZ2SK3377-Z-AZ - SWITCHING N-CHANN |
8,099 | - |
RFQ |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 20A (Ta) | 4V, 10V | 44mOhm @ 10A, 10V | 2.5V @ 1mA | 17 nC @ 10 V | ±20V | 760 pF @ 10 V | - | 1W (Ta), 30W (Tc) | 150°C | Surface Mount | ||
FDMS3616SSMALL SIGNAL FIELD-EFFECT TRANSI |
6,000 | - |
RFQ |
Datasheet |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
IRFZ46NSTRLPBFMOSFET N-CH 55V 53A D2PAK |
639 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 53A (Tc) | 10V | 16.5mOhm @ 28A, 10V | 4V @ 250µA | 72 nC @ 10 V | ±20V | 1696 pF @ 25 V | - | 3.8W (Ta), 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
2SJ358-T1-AZ2SJ358-T1-AZ - P-CHANNEL MOS FET |
5,550 | - |
RFQ |
Bulk | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 3A (Ta) | 4V, 10V | 300mOhm @ 1.5A, 10V | 2V @ 1mA | 23.9 nC @ 10 V | +10V, -20V | 600 pF @ 10 V | - | 2W (Ta) | 150°C | Surface Mount | ||
CSD86336Q3DCSD86336Q3D - 25V, N-CHANNEL SYN |
4,670 | - |
RFQ |
Datasheet |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
GC11N65FN650V,RD(MAX)<360M@10V,VTH2.5V~4 |
3,284 | - |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A | - | 360mOhm @ 5.5A, 10V | 4V @ 250µA | 21 nC @ 10 V | ±30V | 901 pF @ 50 V | - | 31.3W | -55°C ~ 150°C (TJ) | Through Hole | |
IPD65R660CFDIPD65R660 - 650V AND 700V COOLMO |
827 | - |
RFQ |
Datasheet |
Bulk | CoolMOS™ CFD2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 6A (Tc) | 10V | 660mOhm @ 2.1A, 10V | 4.5V @ 200µA | 22 nC @ 10 V | ±20V | 615 pF @ 100 V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
IRFR3607TRPBFMOSFET N-CH 75V 56A DPAK |
158 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 56A (Tc) | 10V | 9mOhm @ 46A, 10V | 4V @ 100µA | 84 nC @ 10 V | ±20V | 3070 pF @ 50 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
DIT050N06MOSFET, TO-220AB, 60V, 50A, N, 8 |
8,000 | - |
RFQ |
Datasheet |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 10V | 20mOhm @ 20A, 10V | 2.5V @ 250µA | 50 nC @ 10 V | ±20V | 2050 pF @ 30 V | - | 85W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
BUK963R2-40B,118NEXPERIA BUK963R2-40B - 100A, 40 |
4,042 | - |
RFQ |
Datasheet |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 5V, 10V | 2.8mOhm @ 25A, 10V | 2V @ 1mA | 93.4 nC @ 5 V | ±15V | 10502 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
IAUC120N04S6L012ATMA1IAUC120N04S6L012ATMA1 |
5,910 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 4.5V, 10V | 1.21mOhm @ 60A, 10V | 2V @ 60µA | 80 nC @ 10 V | ±16V | 4832 pF @ 25 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
FDPF5N50NZFPOWER FIELD-EFFECT TRANSISTOR, 4 |
8,000 | - |
RFQ |
Datasheet |
Bulk,Tube | UniFET-II™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 4.2A (Tc) | 10V | 1.75Ohm @ 2.1A, 10V | 5V @ 250µA | 12 nC @ 10 V | ±25V | 485 pF @ 25 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
FQPF9P25YDTUMOSFET P-CH 250V 6A TO220F-3 |
705 | - |
RFQ |
Datasheet |
Bulk | QFET® | Active | P-Channel | MOSFET (Metal Oxide) | 250 V | 6A (Tc) | 10V | 620mOhm @ 3A, 10V | 5V @ 250µA | 38 nC @ 10 V | ±30V | 1180 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IRF8304MTRPBFMOSFET N-CH 30V 28A DIRECTFET |
773 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 28A (Ta), 170A (Tc) | 4.5V, 10V | 2.2mOhm @ 28A, 10V | 2.35V @ 100µA | 42 nC @ 4.5 V | ±20V | 4700 pF @ 15 V | - | 2.8W (Ta), 100W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | |
PSMN8R7-80PS,127NEXPERIA PSMN8R7 - N-CHANNEL 80 |
8,000 | - |
RFQ |
Datasheet |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 90A (Tc) | 10V | 8.7mOhm @ 10A, 10V | 4V @ 1mA | 52 nC @ 10 V | ±20V | 3346 pF @ 40 V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
RJK6002DPH-E0#T2RJK6002DPH - N CHANNEL MOSFET |
3,467 | - |
RFQ |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 2A (Ta) | 10V | 6.8Ohm @ 1A, 10V | 4.5V @ 1mA | 6.2 nC @ 10 V | ±30V | 165 pF @ 25 V | - | 30W (Tc) | 150°C | Through Hole | ||
GT035N06TN-CH, 60V,170A, RD(MAX)<3.5M@10V |
187 | - |
RFQ |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 170A (Tc) | 4.5V, 10V | 3.5mOhm @ 20A, 10V | 2.5V @ 250µA | 70 nC @ 10 V | ±20V | 5064 pF @ 30 V | - | 215W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ||
PHP20NQ20T,127NEXPERIA PHP20NQ20T - 20A, 200V |
8,796 | - |
RFQ |
Datasheet |
Bulk | TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 20A (Tc) | 10V | 130mOhm @ 10A, 10V | 4V @ 1mA | 65 nC @ 10 V | ±20V | 2470 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | ||
IRF6802SDTRPBFIRF6802 - 12V-300V N-CHANNEL POW |
4,800 | - |
RFQ |
Datasheet |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
IPB80N03S4L-03IPB80N03 - 20V-40V N-CHANNEL AUT |
1,000 | - |
RFQ |
Datasheet |
Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 3.7mOhm @ 80A, 10V | 2.2V @ 45µA | 75 nC @ 10 V | ±16V | 5100 pF @ 25 V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |