Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFR9120

IRFR9120

MOSFET P-CH 100V 5.6A DPAK

Harris Corporation

1,569 -

RFQ

IRFR9120

Datasheet

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 100 V 5.6A (Tc) 10V 600mOhm @ 3.4A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 390 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
HUFA75333G3

HUFA75333G3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

1,512 -

RFQ

HUFA75333G3

Datasheet

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 55 V 66A (Tc) 10V 16mOhm @ 66A, 10V 4V @ 250µA 85 nC @ 20 V ±20V 1300 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDP6676S

FDP6676S

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

1,485 -

RFQ

FDP6676S

Datasheet

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 76A (Ta) 4.5V, 10V 6.5mOhm @ 38A, 10V 3V @ 1mA 56 nC @ 5 V ±16V 4853 pF @ 15 V - 70W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK3570-ZK-E1-AZ

2SK3570-ZK-E1-AZ

POWER FIELD-EFFECT TRANSISTOR

Renesas Electronics America Inc

800 -

RFQ

2SK3570-ZK-E1-AZ

Datasheet

Bulk * Active - - - - - - - - - - - - - -
NP40N055KHE-E1-AZ

NP40N055KHE-E1-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

800 -

RFQ

NP40N055KHE-E1-AZ

Datasheet

Bulk * Active - - - - - - - - - - - - - -
FQI9N50TU

FQI9N50TU

MOSFET N-CH 500V 9A I2PAK

Fairchild Semiconductor

756 -

RFQ

FQI9N50TU

Datasheet

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 9A (Tc) 10V 730mOhm @ 4.5A, 10V 5V @ 250µA 36 nC @ 10 V ±30V 1450 pF @ 25 V - 3.13W (Ta), 147W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUFA75842S3S

HUFA75842S3S

MOSFET N-CH 150V 43A D2PAK

Fairchild Semiconductor

542 -

RFQ

HUFA75842S3S

Datasheet

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 150 V 43A (Tc) 10V 42mOhm @ 43A, 10V 4V @ 250µA 175 nC @ 20 V ±20V 2730 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQB9N50TM

FQB9N50TM

MOSFET N-CH 500V 9A D2PAK

Fairchild Semiconductor

485 -

RFQ

FQB9N50TM

Datasheet

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 9A (Tc) 10V 730mOhm @ 4.5A, 10V 5V @ 250µA 36 nC @ 10 V ±30V 1450 pF @ 25 V - 3.13W (Ta), 147W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPAN60R360P7SXKSA1

IPAN60R360P7SXKSA1

MOSFET N-CH 650V 9A TO220

Infineon Technologies

500 -

RFQ

IPAN60R360P7SXKSA1

Datasheet

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 650 V 9A (Tc) 10V 360mOhm @ 2.7A, 10V 4V @ 140µA 13 nC @ 10 V ±20V 555 pF @ 400 V - 22W (Tc) -40°C ~ 150°C (TJ) Through Hole
IRL6283MTRPBF

IRL6283MTRPBF

DIRECTFET N-CHANNEL POWER MOSFET

International Rectifier

4,800 -

RFQ

IRL6283MTRPBF

Datasheet

Bulk HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 20 V 38A (Ta), 211A (Tc) 2.5V, 4.5V 0.75mOhm @ 50A, 10V 1.1V @ 100µA 158 nC @ 4.5 V ±12V 8292 pF @ 10 V - 2.1W (Ta), 63W (Tc) -40°C ~ 150°C (TJ) Surface Mount
2SJ529-91L-E

2SJ529-91L-E

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc

1,387 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FSS163-TL-E

FSS163-TL-E

4V DRIVE SERIES

onsemi

6,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RFD16N05

RFD16N05

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

3,936 -

RFQ

RFD16N05

Datasheet

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 50 V 16A (Tc) 10V 47mOhm @ 16A, 10V 4V @ 250µA 80 nC @ 20 V ±20V 900 pF @ 25 V - 72W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF76432S3ST

HUF76432S3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

3,124 -

RFQ

HUF76432S3ST

Datasheet

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 60 V 59A (Tc) 4.5V, 10V 17mOhm @ 59A, 10V 3V @ 250µA 53 nC @ 10 V ±16V 1765 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU120ATU

IRFU120ATU

MOSFET N-CH 100V 8.4A IPAK

Fairchild Semiconductor

2,580 -

RFQ

IRFU120ATU

Datasheet

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 8.4A (Tc) 10V 200mOhm @ 4.2A, 10V 4V @ 250µA 22 nC @ 10 V - 480 pF @ 25 V - 2.5W (Ta), 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFD311

IRFD311

N-CHANNEL POWER MOSFET

Harris Corporation

1,332 -

RFQ

IRFD311

Datasheet

Bulk - Active N-Channel MOSFET (Metal Oxide) 350 V 400mA (Tc) 10V 3.6Ohm @ 200mA, 10V 4V @ 250µA 7.5 nC @ 10 V ±20V 135 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
RF1S530

RF1S530

N-CHANNEL POWER MOSFET

Harris Corporation

1,190 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IPB03N03LAG

IPB03N03LAG

N-CHANNEL POWER MOSFET

Infineon Technologies

1,000 -

RFQ

IPB03N03LAG

Datasheet

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 25 V 80A (Tc) 4.5V, 10V 2.7mOhm @ 55A, 10V 2V @ 100µA 57 nC @ 5 V ±20V 7027 pF @ 15 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF234

IRF234

N-CHANNEL HERMETIC MOS HEXFET

International Rectifier

789 -

RFQ

IRF234

Datasheet

Bulk * Active - - - - - - - - - - - - - -
BS170

BS170

MOSFET N-CH 60V 300MA TO92-3

NTE Electronics, Inc

639 -

RFQ

BS170

Datasheet

Bag - Active N-Channel MOSFET (Metal Oxide) 60 V 300mA (Ta) - 5Ohm @ 200mA, 10V 3V @ 1mA - - 60 pF @ 10 V - - - Through Hole
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