Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXFT140N20X3HVMOSFET N-CH 200V 140A TO268HV |
2,323 | - |
RFQ |
Datasheet |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 140A (Tc) | 10V | 9.6mOhm @ 70A, 10V | 4.5V @ 4mA | 127 nC @ 10 V | ±20V | 7660 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
RFM10N50N-CHANNEL POWER MOSFET |
143 | - |
RFQ |
Datasheet |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 10A (Tc) | 10V | 600mOhm @ 5A, 10V | 4V @ 1mA | - | ±20V | 3000 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IRFAF52N-CHANNEL HERMETIC MOS HEXFET |
172 | - |
RFQ |
Datasheet |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
IXFR44N50PMOSFET N-CH 500V 24A ISOPLUS247 |
2,014 | - |
RFQ |
Datasheet |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 24A (Tc) | 10V | 150mOhm @ 22A, 10V | 5V @ 4mA | 98 nC @ 10 V | ±30V | 5440 pF @ 25 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
RJK5020DPK01-EN-CHANNEL POWER MOSFET |
559 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
IXTA230N075T2MOSFET N-CH 75V 230A TO263 |
150 | - |
RFQ |
Datasheet |
Tube | TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 230A (Tc) | 10V | 4.2mOhm @ 50A, 10V | 4V @ 250µA | 178 nC @ 10 V | ±20V | 10500 pF @ 25 V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
IXTQ110N10PMOSFET N-CH 100V 110A TO3P |
3,427 | - |
RFQ |
Datasheet |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 110A (Tc) | 10V | 15mOhm @ 500mA, 10V | 5V @ 250µA | 110 nC @ 10 V | ±20V | 3550 pF @ 25 V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
FQL50N40MOSFET N-CH 400V 50A TO264-3 |
338 | - |
RFQ |
Datasheet |
Tube | QFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 50A (Tc) | 10V | 75mOhm @ 25A, 10V | 5V @ 250µA | 210 nC @ 10 V | ±30V | 7500 pF @ 25 V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IXTK102N30PMOSFET N-CH 300V 102A TO264 |
2,165 | - |
RFQ |
Datasheet |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 102A (Tc) | 10V | 33mOhm @ 500mA, 10V | 5V @ 500µA | 224 nC @ 10 V | ±20V | 7500 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IMW65R057M1HXKSA1SILICON CARBIDE MOSFET, PG-TO247 |
2,038 | - |
RFQ |
Datasheet |
Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 35A (Tc) | 18V | 74mOhm @ 16.7A, 18V | 5.7V @ 5mA | 28 nC @ 18 V | +20V, -2V | 930 pF @ 400 V | - | 133W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
APT6025BVRGMOSFET N-CH 600V 25A TO247 |
3,243 | - |
RFQ |
Datasheet |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Tc) | - | 250mOhm @ 500mA, 10V | 4V @ 1mA | 275 nC @ 10 V | - | 5160 pF @ 25 V | - | - | - | Through Hole | |
IRF614STRLMOSFET N-CH 250V 2.7A D2PAK |
3,646 | - |
RFQ |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 2.7A (Tc) | 10V | 2Ohm @ 1.6A, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±20V | 140 pF @ 25 V | - | 3.1W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | ||
IRF614STRRMOSFET N-CH 250V 2.7A D2PAK |
2,658 | - |
RFQ |
Tape & Reel (TR) | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 2.7A (Tc) | 10V | 2Ohm @ 1.6A, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±20V | 140 pF @ 25 V | - | 3.1W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | ||
IRF620LMOSFET N-CH 200V 5.2A I2PAK |
2,354 | - |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 5.2A (Tc) | 10V | 800mOhm @ 3.1A, 10V | 4V @ 250µA | 14 nC @ 10 V | ±20V | 260 pF @ 25 V | - | - | -55°C ~ 150°C (TJ) | Through Hole | |
IRF620STRLMOSFET N-CH 200V 5.2A D2PAK |
3,797 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 5.2A (Tc) | 10V | 800mOhm @ 3.1A, 10V | 4V @ 250µA | 14 nC @ 10 V | ±20V | 260 pF @ 25 V | - | 3W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
IRF620STRRMOSFET N-CH 200V 5.2A D2PAK |
3,921 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 5.2A (Tc) | 10V | 800mOhm @ 3.1A, 10V | 4V @ 250µA | 14 nC @ 10 V | ±20V | 260 pF @ 25 V | - | 3W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
IRF624LMOSFET N-CH 250V 4.4A I2PAK |
2,216 | - |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 4.4A (Tc) | 10V | 1.1Ohm @ 2.6A, 10V | 4V @ 250µA | 14 nC @ 10 V | ±20V | 260 pF @ 25 V | - | - | -55°C ~ 150°C (TJ) | Through Hole | |
IRF624STRLMOSFET N-CH 250V 4.4A D2PAK |
3,315 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 4.4A (Tc) | 10V | 1.1Ohm @ 2.6A, 10V | 4V @ 250µA | 14 nC @ 10 V | ±20V | 260 pF @ 25 V | - | 3.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
IRF624STRRMOSFET N-CH 250V 4.4A D2PAK |
3,926 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 4.4A (Tc) | 10V | 1.1Ohm @ 2.6A, 10V | 4V @ 250µA | 14 nC @ 10 V | ±20V | 260 pF @ 25 V | - | 3.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
IRF630LMOSFET N-CH 200V 9A I2PAK |
3,688 | - |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 9A (Tc) | 10V | 400mOhm @ 5.4A, 10V | 4V @ 250µA | 43 nC @ 10 V | ±20V | 800 pF @ 25 V | - | - | -55°C ~ 150°C (TJ) | Through Hole |