Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXTT4N150HVMOSFET N-CH 1500V 4A TO268 |
2,302 | - |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1500 V | 4A (Tc) | 10V | 6Ohm @ 500mA, 10V | 5V @ 250µA | 44.5 nC @ 10 V | ±30V | 1576 pF @ 25 V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
IXFR64N60Q3MOSFET N-CH 600V 42A ISOPLUS247 |
3,693 | - |
RFQ |
Datasheet |
Tube | HiPerFET™, Q3 Class | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 42A (Tc) | 10V | 104mOhm @ 32A, 10V | 6.5V @ 4mA | 190 nC @ 10 V | ±30V | 9930 pF @ 25 V | - | 568W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IXFN44N100PMOSFET N-CH 1000V 37A SOT-227B |
3,155 | - |
RFQ |
Datasheet |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 37A (Tc) | 10V | 220mOhm @ 22A, 10V | 6.5V @ 1mA | 305 nC @ 10 V | ±30V | 19000 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | |
IXFR32N100Q3MOSFET N-CH 1000V 23A ISOPLUS247 |
2,598 | - |
RFQ |
Datasheet |
Tube | HiPerFET™, Q3 Class | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 23A (Tc) | 10V | 350mOhm @ 16A, 10V | 6.5V @ 8mA | 195 nC @ 10 V | ±30V | 9940 pF @ 25 V | - | 570W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IXFB40N110Q3MOSFET N-CH 1100V 40A PLUS264 |
3,024 | - |
RFQ |
Datasheet |
Tube | HiPerFET™, Q3 Class | Active | N-Channel | MOSFET (Metal Oxide) | 1100 V | 40A (Tc) | 10V | 260mOhm @ 20A, 10V | 6.5V @ 8mA | 300 nC @ 10 V | ±30V | 14000 pF @ 25 V | - | 1560W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
MMIX1F180N25TMOSFET N-CH 250V 132A 24SMPD |
3,326 | - |
RFQ |
Datasheet |
Tube | GigaMOS™, HiPerFET™, TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 132A (Tc) | 10V | 13mOhm @ 90A, 10V | 5V @ 8mA | 364 nC @ 10 V | ±20V | 23800 pF @ 25 V | - | 570W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
IXTT3N200P3HVMOSFET N-CH 2000V 3A TO268 |
2,802 | - |
RFQ |
Datasheet |
Tube | Polar P3™ | Active | N-Channel | MOSFET (Metal Oxide) | 2000 V | 3A (Tc) | 10V | 8Ohm @ 1.5A, 10V | 5V @ 250µA | 70 nC @ 10 V | ±20V | 1860 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
APT50M50JLLMOSFET N-CH 500V 71A ISOTOP |
3,558 | - |
RFQ |
Datasheet |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 71A (Tc) | 10V | 50mOhm @ 35.5A, 10V | 5V @ 5mA | 200 nC @ 10 V | ±30V | 10550 pF @ 25 V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | |
IXFN80N50Q3MOSFET N-CH 500V 63A SOT227B |
3,039 | - |
RFQ |
Datasheet |
Tube | HiPerFET™, Q3 Class | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 63A (Tc) | 10V | 65mOhm @ 40A, 10V | 6.5V @ 8mA | 200 nC @ 10 V | ±30V | 10000 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | |
MMIX1T132N50P3MOSFET N-CH 500V 63A POLAR3 |
2,417 | - |
RFQ |
Datasheet |
Tube | Polar™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 63A (Tc) | 10V | 43mOhm @ 66A, 10V | 5V @ 8mA | 267 nC @ 10 V | ±30V | 18600 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
IXFN44N80Q3MOSFET N-CH 800V 37A SOT227B |
3,274 | - |
RFQ |
Datasheet |
Tube | HiPerFET™, Q3 Class | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 37A (Tc) | 10V | 190mOhm @ 22A, 10V | 6.5V @ 8mA | 185 nC @ 10 V | ±30V | 9840 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | |
IXFN32N100Q3MOSFET N-CH 1000V 28A SOT227B |
3,251 | - |
RFQ |
Datasheet |
Tube | HiPerFET™, Q3 Class | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 28A (Tc) | 10V | 320mOhm @ 16A, 10V | 6.5V @ 8mA | 195 nC @ 10 V | ±30V | 9940 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | |
APT40M35JVRMOSFET N-CH 400V 93A SOT227 |
3,463 | - |
RFQ |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 93A (Tc) | 10V | 35mOhm @ 46.5A, 10V | 4V @ 5mA | 1065 nC @ 10 V | ±30V | 20160 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ||
SCTH70N120G2V-7SILICON CARBIDE POWER MOSFET 120 |
3,296 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 90A (Tc) | 18V | 30mOhm @ 50A, 18V | 4.9V @ 1mA | 150 nC @ 18 V | +22V, -10V | 3540 pF @ 800 V | - | 469W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
IXFN74N100XMOSFET N-CH 1000V 74A SOT227B |
2,435 | - |
RFQ |
Datasheet |
Tube | HiPerFET™, Ultra X | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 74A (Tc) | 10V | 66mOhm @ 37A, 10V | 5.5V @ 8mA | 425 nC @ 10 V | ±30V | 17000 pF @ 25 V | - | 1170W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | |
GA50JT12-247TRANS SJT 1200V 100A TO247AB |
2,107 | - |
RFQ |
Datasheet |
Tube | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 100A (Tc) | - | 25mOhm @ 50A | - | - | - | 7209 pF @ 800 V | - | 583W (Tc) | 175°C (TJ) | Through Hole | |
APTML100U60R020T1AGMOSFET N-CH 1000V 20A SP1 |
3,544 | - |
RFQ |
Datasheet |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 20A (Tc) | 10V | 720mOhm @ 10A, 10V | 4V @ 2.5mA | - | ±30V | 6000 pF @ 25 V | - | 520W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | |
VMO650-01FMOSFET N-CH 100V 690A Y3-DCB |
3,712 | - |
RFQ |
Datasheet |
Bulk | HiPerFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 690A (Tc) | 10V | 1.8mOhm @ 500mA, 10V | 6V @ 130mA | 2300 nC @ 10 V | ±20V | 59000 pF @ 25 V | - | 2500W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | |
BSD316SNL6327XTMOSFET N-CH 30V 1.4A SOT363-6 |
732 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 1.4A (Ta) | 4.5V, 10V | 160mOhm @ 1.4A, 10V | 2V @ 3.7µA | 0.6 nC @ 5 V | ±20V | 94 pF @ 15 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
FDZ451PZSMALL SIGNAL FIELD-EFFECT TRANSI |
9,571 | - |
RFQ |
Datasheet |
Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 2.6A (Ta) | 1.5V, 4.5V | 140mOhm @ 2A, 4.5V | 1.2V @ 250µA | 8.8 nC @ 4.5 V | ±8V | 555 pF @ 10 V | - | 400mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |